Abstract
We developed a Monte Carlo simulation of electron trajectories in a cell-projection electron beam lithography optical system. In the simulation the emission angle, the velocity and the emission timing of electrons from the electron gun are taking into account. The Coulomb interaction among electrons in the beam is calculated. There are five lenses in the system. Assuming that the stencil mask pattern is a series of line-and-space, the exposure pattern is obtained when the current densities are 5, 10, and 13 A/cm2 at the specimen surface. The probability of electrons to enter the designed pattern as a function of the defocusing distance are calculated. The best refocus length is obtained to give the maximum probability in the designed pattern at the specimen surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
