Abstract
We observed excited species near a substrate during GaN growth by optical emission spectroscopy (OES). Both GaN growth rate and excited Ga emission intensity were studied by varying substrate bias conditions. Decrease in Ga emission intensity under high positive bias condition can be explained by suppression of Ga desorption. Thus, OES is considered to be a useful tool to understand GaN growth mechanism in ECR plasma-excited MBE.We also demonstrated GaN growth using helium-nitrogen mixed gas plasma. It was found that, compared with the GaN growth using nitrogen plasma without helium, the GaN growth rate was increased by using the mixed gas plasma.
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