Abstract
Reactive RF (Radio Frequency) plasma spray process, in which metal element reacts with surrounding active species in plasma, has been receiving great interest to form nitride ceramics thick coatings. It was possible to fabricate TiN, Si3N4 and AlN thick coatings by this process. However, nitriding process has not been elucidated yet. To control the formation degree of the nitride with reactive RF plasma spray process, it is necessary to verify the nitriding process. In this study, plasma temperature and active species in the plasma were investigated by emission spectroscopic measurement. Plasma temperature increased with N2 gas flow rate. Adding H2 in plasma gas increased plasma temperature. Plasma gas fraction of N2 and H2 affected the amount of generating NH radical significantly. However, plasma gas fraction did not affect plasma temperature. Both plasma temperature and the amount of generating NH radical increased with RF power.
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