Abstract
We have reported formation of ZnO thin films deposited on z-cut LiNbO3 substrates using RF-sputtering technique. The substrate temperatures during deposition were changed from 300 to 703 K in various oxygen-argon atmospheres. ZnO (002) peak intensity depending on gas flow rate of oxygen to argon, substrate temperature and anneal temperature were observed. The film showed the crystalline growth highly oriented at [002] direction, when the film on z-cut LiNbO3 substrate was deposited at 603 K in Ar (80%) +O2 (20%) gas or annealed at 890 K in argon atmosphere.
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