Abstract
Application of X-ray photoelectron diffraction (XPD) to the study of the structures of submonolayer semiconductor interfaces is described. A simple kinematical formalizm is basically valid for the analysis of XPD data. This is demonstrated for the Ge (111) lattice. Determination of adsorbate geometries of Ge (111) √3 × √3-Sn and Si (111) √3 × √3 -Ag surfaces is explained as examples of XPD analysis. A brief description of future trend and prospect of photoelectron diffraction in general is made. [J. Cryst. Soc. Jpn. 28, 218 (1986) ] .
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