Abstract
Phosphorescent white organic light-emitting diodes with double light-emitting layers were fabricated based on phosphorescent blue emittor bis[3,5-difluoro-2-(2-pridyl) phenyl-(2-earboxypyribyl) iridumⅢ](FIrpic) and red emittor bis(2-methyldibenzo[f,h]quinoxaline)(acetylacetonate) iridium(Ⅲ)(Ir(MDQ)2acac).FIrpic was doped in an ultra wide band-gap host 1,3-bis(triphenylsilyl) benzene(UGH3),and Ir(MDQ)2acac was doped in the host 4,4',4″-tris(carbazol-9-yl) triphenylamine(TCTA).A hole transporting wide-band-gap material 1,3-bis(carbazol-9-yl) benzene(mCP) was introduced between the emitting layers.The device structure was ITO /NPB(40nm) /TCTA∶ Ir(MDQ)2acac 7%(10 nm) /mCP(x nm) /UGH3 ∶ Firpic 8%(30 nm) /BPhen(30nm) /LiF(0.8 nm) /Al(200 nm).The results show that the interlayer plays an important role of balancing charge carriers,and blocking energy transfer between the emitting layers.With an appropriate thickness of the interlayer,the device performances can be significantly enhanced.Compared with the device without interlayer,the maximum current efficiency can be enhanced from 3.4 cd /A to 13.2 cd /A.
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