Abstract
A gated niobium nitride field emitter array was fabricated by transfer mold method and etch back method, in order to show the feasibility of niobium nitride thin film as a cathode material of vacuum microelectronics devices. Silicon substrate was etched to have pyramidal mold and its surface was oxidized. Niobium nitride thin film was deposited onto the oxidized mold by ion beam assisted deposition. After the deposition, sample was bonded to glass plate and the silicon mold was removed by mechanical and chemical etching. After etching, molybdenum gate was deposited and the gate aperture was fabricated by etch back process. The electron emission property was measured in high vacuum and field emission was confirmed.
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