Abstract
We measured sputter etching rates of silicide films (CoSi2, NiSi2, TiSi2 and WSi), and investigated the ion energy dependence. We found that the relative sputter etching rates of them to that of SiO2 film were almost independent of sputter ion energy. We estimated surface binding energy of Ni from relative sputter etching rates and the ratio of calculated nuclear stopping power cross-sections of Ni and Si. We found that the surface binding energy determined by the relative sputter etching rate, was in accord with the well-known value.
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