Abstract
Magnetization reversal in Bi−Ga-substituted YIG film rectangular patterns, formed by micro-lapping and subsequent acid etching, is based on the nucleation and extent of reverse domains. As the pattern size decreases from 300×300μm to less than 100×100μm, nucleation field (Hn) increases from 100 to 530 Oe which is equal to the anisotropy field. To control the Hn, an artificial magnetic defect is formed in the center of the pattern by focussed ion-beam implantation. When Ge- or Si-ions are implanted at 50 keV in a spot 0.3μm in dia., Hn drops less than 330 Oe. As the Ge-ion implanted area extends, Hn decreases gradually. Assuming the ion-implanted region is a reverse domain nucleus, Hn is calculated as the external field where the maximum of total magnetic energy is attained. The theoretical values of Hn agree well with the experimental ones.
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