Abstract
Cu was used as the source / drain( S / D) electrodes of amorphous indium-zinc-oxide( aIZO) thin-film transistors( TFTs) in order to realize low-resistance metallization in oxide thin film transistors. Cu film with a resistivity as low as 2. 0 μΩ·cm was deposited by optimizing the sputtering process. The crystal structure,adhesive property of Cu film as well as the interfaces of Cu / aIZO were investigated. In addition,a-IZO TFTs with Cu S / D electrodes were fabricated. The Cu films were polycrystalline. The adhesion of Cu to glass substrate was enhanced by introducing an aIZO film. Meanwhile,the diffusion of Cu atoms was suppressed in a-IZO. The fabricated TFT exhibited a saturated mobility of 12. 9 cm2/( V · s),a subthreshold voltage of 0. 28 V / dec and a threshold voltage of- 0. 6 V.
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