Abstract
The temperature properties of layered thin film magneto-impedance (MI) elements composed of FeCoSiB/Cu/FeCoSiB were investigated for use in a magnetic sensor that remains stable under temperature change. The properties of the layered thin film MI elements as deposited were changed by increasing the temperature or by establishing a temperature cycle of 25 °C-100 °C. When these MI elements were annealed under a magnetic field at the most suitable temperature, which was 150 °C lower than the curie tempaerature of the magnetic film, the change in the MI properties due to the temperature increase or the temperature cycle was decreased. In particular, the change in inductance due to the temperature increase was small when the Fe4Co74Si8B14 zero magnetostriction magnetic film was used in the layered thin film MI element.
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