Abstract
Transition metal carbide thin films were prepared by radio frequency magnetron sputter deposition. The target used was hafnium carbide and tantalum carbide, and sputtering was taken place by argon gas discharge. It was necessary to adjust the sputtering condition, in order to obtain carbide films, otherwise the resultant films contained much oxygen. Higher gas pressure and lower input power gave almost stoichiometry carbide films for tantalum, whlie the condition was not still appropriate for hafnium. We have evaluated crystallinity and work function of the deposited films.
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