Abstract
The transport properties and tunnel magnetoresistance (TMR) of ferromagnetic tunnel junctions with double barriers are investigated in the free-electron approximation. Tunnel currents are calculated on the basis of a Tsu-Esaki-type equation using exact transmission coefficients for the double junctions. Enhancement and oscillation of the tunnnel magnetoresistance occur as a function of the bias voltage. It is shown that these can be attributed to spin-dependent resonant tunneling through resonant states formed in the quantum well.
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