Abstract
We designed high-frequency-carrier type thin film sensors to obtain high impedance change. We considered the relationships between carrier current density and noise level, carrier current density and sideband level, and optimum impedance of sensor element. The meander type sensor element fabricated had an impedance change of 30 Ω/Oe at 500 MHz. Sensitivity of 4.5×10-8 Oe was demonstrated at 501 kHz using a carrier-suppression technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
