パワーモジュールの絶縁基板における三重点の電界強度と絶縁破壊電圧に関する研究

Abstract

Silicon carbide (SiC) devices exhibit several advantages such as high withstand voltage, high temperature operation, and low losses compared to conventional Si devices. However, in order to take full advantage of SiC devices, it is necessary to improve the characteristics of the power module package. In particular, the electrical insulation properties of the package depend on the insulating substrates. In this study, we focused on the difference in the electric field strength distribution when the front and back copper foils are moved horizontally relative to the aluminum nitride substrate.