Abstract
Plasma-enhanced CVD is one of the promising methods for low-temperature growth of oxide superconducting films which is required for the electronic applications. This review reports recent studies on low-temperature growth of oxide superconducting films by plasma-enhanced CVD. Y-Ba-Cu-O films can be grown at a temperature as low as 515°C by microwave plasma-enhanced CVD using β-diketonate organometallic complexes as metal sources. Bi-Sr-Ca-Cu-O films can be grown at around 610°C by rf plasma-enhanced CVD using metal halide sources. Optical emission spectroscopy in the growth chamber reveals that the CVD reaction mechanism can be changed by exciting organometallic complexes.
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