Abstract
With regard to semicondutors, thin films that are manufactured for DRAM (Dynamic Random Access Memory) capacitors with high dielectric constant will be used for 256M-or 1G-DRAMs. Sources of these thin films are in liquid phase at normal condition. In order to deposit thin films on a complicated structure of DRAM cells, it is necessary to vaporize these sources. A new type of vaporizer which vaporizes these sources inside of the reactor was studied. This vaporizer, celled direct injection vaporizer, injects these sources directly into a reactor, makes very fine droplets, and vaporizes these droplets by radiation from a susceptor and thermal conduction from gases in the reactor. In this paper, the method of measurement for vaporization was studied. The measurement for diameters and the ratio of vaporization of droplets that were injected in a vacuum chamber were conducted with a substitutional liquid of PET (Penta-Ethoxy Tantalum). The results indicated that it is possible to vaporize the liquid sources using the direct injection vaporizer.
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