Abstract
This paper discusses a wall-pinned, high-frequency carrier-type, thin-film magnetic field sensor, which can decrease the area of closure domains and reduce wall displacement of the sensor element. The sensor element was annealed at 350°C for 20 minutes without any magnetic field, thus inducing wall pinning. We examined the relationship between the domain structure and impedance change of the wall-pinned sensor element. The decrease in the sensitivity around a high-sensitivity area was suppressed owing to the reduction of growth of the closure domains.
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