Abstract
The electromigration of Cu interconnection was investigated to solve the Huntigton's equation by numerical analysis. The Cu atoms moved toward anode from cathode and accumulated at the anode end. This result was in good agreement with the result previously derived by our theoretical analysis. The accumulation rate of Cu atoms increased with increasing in current density, but it was not so influenced by temperature. The characteristic of the rate of electromigration showed a liner relationship with current density and exponential relationship with temperature. This result agreed with the equation experimentally derived by Black. This result proved that numerical analysis of Huntignton's equation enables to predict of electromigration failure time.
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