Abstract
The authors have studied the low-pressure silent-discharge-type active oxygen generator in terms of its application to the formation of oxide thin films. In this paper the oxidation power of active oxygen in the formation of oxide thin films is compared with that of oxygen and ozone by forming silicon oxide thin films. The authors confirmed that the oxidation power is active oxygen>ozone>oxygen based on the experimental result of the number of x in SiOx thin films. Furthermore, the authors applied active oxygen to the formation of the thin-film high-temperature superconductor and active oxygen was found to be effective for the formation of the thin film with high performance. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 163(1): 1–7, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20671
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