Abstract
A cantilever resonant microbeam (MB), laser diodes (LD), and a photodiode are fabricated on the surface of a gallium arsenide (GaAs) substrate. The microbeam length, width and thickness are 110 (50), 3.0, and 5μm and the distances from the facet of LD 1 to the side wall of the MB and LD 2 to MB are 3.0 and 30μm. The microbeam is excited photothermally by light from one laser diode (LD 2). With a photodiode, the vibration is detected as the light output variation due to the optical length difference between the microbeam and another laser diode (LD 1). Carrier-to-noise ratio is very high (45 dB) due to an extremely short (3μm) external cavity length. Such small distance allows a lensless system, which makes it easier to fabricate.
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