Abstract
Anodized porous silicon (PS) has been investigated mainly in relation to its initial oxidation and metal silicidation by means of infrared (IR) spectroscopy, electron spectroscopy and high energy ion scattering. The results show that hydrogen atoms chemisorbed to Si atoms on internal pore surfaces during the anodization are neither desorbed nor reacted with oxygen atoms at the oxidation at low temperatures <183°C. The initial oxidation is characteristic of a diffusion-limited process with an activation energy of 0.6 eV. The relation between oxidations of bulk Si and the present results is discussed. On the other hand, a re-distribution of Ti in TiSi2 grown on PS has been observed when the specimen with un-reacted PS layer below the TiSi2 is re-annealed at high temperatures (950°C). An application of PS to the metal silicidation where the lateral growth can be reduced is also discussed.
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