Abstract
This paper reports analytical evaluation for reverse recovery action and turn-off action from high level injection state of PiN diodes and IGBTs, respectively. In the analytical evaluation, we take account of structural parameters and current continuity at the both ends of i-layer. We evaluate optimum structure for minimum energy dissipation of these switching actions by using newly employed index RiE calculated by Ri(resistance of i-layer at high level injection state) ×E(energy dissipation on i-layer during these switching actions). RiE is minimized in the case that the carrier piled up at the portion from which depletion layer start to spreading. Besides, we analytically clarify the ideal carrier profile for minimum RiE.
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