電子部品に対する放射線照射効果

Abstract

Effect of γ-irradiation and pile irradiation on electronic components was studied. In view of the importance of dynamic properties in radiation environment, their changes were measured chiefly during γ-irradiation and were recognized mostly in the course of exposure to γ-rays; generally, recovery occurs upon removal from the radiation field. Permanent effects were observed in resistors and transistors in varing degrees. Measurements of pile irradiation effects on electronic components were carried out only after irradiation. Only magnetic materials (ferrite cores) among the passive elements (capacitor, resistor, magnetic core and so on) showed especially heavy changes in their properties. Diodes and transistors among the active elements exhibitted appreciable changes. It is to be noted that they have lost the action upon exposure to an integrated neutron flux of 1016 nvt. Changes in diodes are in different directions according to bulk material. Silicon diode degrades, fairly in forward characteristics, while germanium diode does in the reverse direction. Generally lco and β of transistor increases and decreases respectively with increasing radiation dose.