誘導結合プラズマ支援型多重磁極マグネトロンスパッタ法により作製したニッケル薄膜の基板バイアス電圧依存性

Abstract

The dependence of substrate dc bias voltage on structural properties of Ni thin films using magnetron sputtering with multipolar magnetic plasma confinement (MMPC) assisted by inductively coupled plasma (ICP) was investigated. When magnetron sputtering with MMPC assisted by ICP was applied, the current flowing into the substrate due to Ar+ ions and sputtered Ni+ ions was increased. Ni thin films were deposited due to the ions energy controlled by each substrate dc bias voltage from 0 V to -80 V. The Ni thin films were analyzed by X-ray diffraction (XRD) and a transmission electron microscope (TEM). It is shown that applying the substrate dc bias voltage results in a significant change of the relative intensity of the orientation of (111) plane and an increase in the grain size.