Abstract
Crystal structure and residual stresses in AlN films deposited on BLC glass substrates by a magnetron sputtering method were measured by X-ray diffraction method. Deposited AlN films had a columnar structure with its ‹00·1› orientation being perpendicular to the glass substrate. From this structure, the intensity of hk·l diffraction could be measured just only at a particular ψ-angle and, therefore, the so-called sin2ψ method could not be applied for measuring their residual stresses. A new stress analyzing method was proposed in the present investigation instead of the sin2ψ method.Compressive residual stresses were found in the AlN films deposited under the condition of fairly high nitrogen gas pressure, while tensile residual stresses were found under the condition of low gas pressure.
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