Abstract
Separation by Implanted Oxygen (SIMOX) wafer is recognized as one of the promising Silicon on Insulator (SOI) substrates to be used for next generation semiconductor device fabrication. Since high dose O+ implantation of about 4 × 1017 ions/cm2 is conventionally carried out in SIMOX wafer fabrication process, the use of very highcurrent ion beams is indispensable for volume production. This report describes characteristics of a new high-current microwave ion source which contains a specially-designed transform waveguide and a cylindrical plasma chamber. Oxygen ion beams of 240 mA could be extracted with multi-aperture electrode system. The data indicates that this source has a good potential to increase SOI substrate throughput.
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