Abstract
Highly Bi-substituted films of YIG were prepared on <111> oriented (GdCa)3(GaMgZr)5O12 substrates by using a reactive ion beam sputtering (IBS) method. In films deposited without substrate heating, <111> oriented garnet crystal phase together with secondary phases were formed by post-deposition annealing. Epitaxial growth of single-phase garnet films was achieved in situ when depositing at ∼550°C In the post-deposition annealed films and the epitaxially grown films, the maximum Bi-contents were 1.93 and 2.16 atoms/f.u., respectively, and the Faraday rotation at a wavelength of 633 nm resulted in -4.3 × 104 and -5.25 × 104 deg/cm, respectively. The Bi-content of 2.16 atoms/f.u. is much higher than that of 1.97 atoms/f.u. expected as the theoretical limit for bulk YIG, which suggests that such a heavy Bi-substitution is achieved through non-thermal equilibrium process characteristic of IBS. It was also revealed that Bi-content in films strongly depended on O2 partial pressure.
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