Abstract
Reactive Atom Beam Etching (RABE) in Cl2 was applied for processing of GaAs. The etch rate was six times higher than that of the conventional ion etching of Ar. Ionized component contained in the beam was less than 11%, so that the fine etching of GaAs could be carried out for both the insulated substrates and the patterned substrates with insulating mask-patterns. Almost perpendicular cross section of side walls was obtained by RABE using photoresist masks. On the other hand, orientation dependent etching (ODE) was obtained by RABE with SiO2 and Al masks.
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