Abstract
e in uence of crystallographic structure on the etching rate of copper was studied in 1 mol/dm ammonium peroxodisulfate solution using a scanning probe microscope (SPM), electron back scatter di raction patterns (EBSD), and corrosion potential measurements. e (001), (101), and (111) faces etched at slower rates than the (327) and (425) faces, which have higher Miller indices. e etching rate of the (001) or (101) oriented polycrystalline copper was approximately half that for the oriented polycrystalline copper with higher indices. e polycrystalline copper etched at highly rate showed a relatively noble corrosion potential. It was suggested that the etching rate of polycrystalline copper was controlled by the mean value of the reduction kinetics of the peroxodisulfate ion on each of the grain surfaces.
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