Abstract
A new plasma source using a ultra high frequency (UHF) power radiated by a multi-window type antenna was developed. The UHF power was confined in a re-entrant type cavity resonator and radiated from 6 (six) quartz windows which were located on the bottom plate of the cavity. The production efficiency of UHF plasma was improved employing the new antenna structure. The radial non-uniformity of the ion current was less than ±5% at the plasma density of 1011 cm-3. The value is applicable for the φ300 mm wafer processing. Some preliminary results on SiO2 etch characteristics employing the perfluorocarbon gas chemistry shows that the plasma source will be suitable for the future fine etch processes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
