Abstract
ZnO doped with 1.5 wt.% Al2O3 (AZO) and 5 wt.% Ga2O3 (GZO) films were deposited on glass substrates by pulsed laser deposition method. In all experiments, repetition rates of 10 Hz, the energy density of 2 J/cm2, and an ablation time of 20 min irrespective of magnetic field. For AZO films deposited in magnetic field, the diffraction peak of ZnO (0002) facets grew large and a crystallinity improved. On the other hand, for GZO films fabricated with or without magnetic field, the crystallinity did not change. It was observed that for AZO films fabricated with magnetic field, the transmittance increased in the visible wavelength range and decreased in the infrared range being reflective of the reduction of carrier concentration.
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