Abstract
Electrical properties of Au/GaAs Schottky contacts fabricated by electron-beam (EB) evaporation were characterized by current-voltage (I-V), capacitance-voltage (C-V) and photoresponse (PR) measurements. Resistance-heated (RH) evaporation and sputter (SP) deposition techniques were also used as references. For n-GaAs substrates, the barrier height became lower in order of RH, EB and SP, and vice versa for p-type substrates. Photoyield as well as depletion-layer width were also compared among the deposition techniques. We intepreted that the poor diode characteristics in EB as well as SP diodes were attributed by donor-type defects introduced on the GaAs surface during the metal deposition.
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