Abstract
Organic thin film transistors based on Weak Epitaxy Growth(WEG) technology are fabricated with two different design: top-gate and bottom-gate configurations.The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine(VOPc).The two structural OTFTs are prepared under the same process conditions,and it is found that the device performance is different.The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT.A high mobility of 1.6 cm2/V·s is obtained in the top-gate structure.The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth(WEG) technology,and the reasons of higher mobility OTFT based on the top-gate configuration is explained.
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