Abstract
Magnetic softening of the tunnel-type magnetoresistance (TMR) effect of Co-Sm-O granular magnetic films was attempted by employing FeNi under layer films that were sputtered under an oblique cathode arrangement. The obliquely sputtered FeNi films had a nano-scale corrugated structure whose height and spacing were approximately 10 nm. Because of the stray field acting between neighboring corrugations of the FeNi film, the resistivity change of the Co-Sm-O granular film formed on the obliquely sputtered FeNi film showed good low-field response, reaching about 240 times higher than that of the single-layer Co-Sm-O film.
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