Abstract
CuInSe2 single crystals have been grown by synthesis solute diffusion method with controlling the growth rate. Effects of the Cu/In in solvents and the temperature of Se source on the purity of grown crystals have been studied. The single crystal with lower carrier density of -1017cm-3 was found to be grown from a stoichiometric solvent (Cu/In -1.0) when the temperature of Se source was 743K.
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