Abstract
The SiO2 film has been successfully synthesized by liquid phase deposition (LPD) method. The microstructure and passivation performance of the SiO2 film have been investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and microwave photoconductive decay (μ-PCD). The results show that the deposited SiO2 film contains a little amount of F element and it is very smooth and dense. The reflectance and surface recombination velocity reduced to 10.88% and 2 830 cm/s, respectively.
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