Abstract
Data-driven materials development using first-principles calculations (materials informatics, MI) is widely known. Process informatics (PI), which explores crystal growth processes, is expected to be pioneered as the next research target in materials development. However, simulation techniques for the chemical vapor deposition (CVD) process, which is the core of PI, have not been developed. This paper describes recent progress in simulation technology for CVD processes, with a particular focus on surface modeling.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
