Abstract
Data-driven materials development using first-principles calculations (materials informatics, MI) is widely known. Process informatics (PI), which explores crystal growth processes, is expected to be pioneered as the next research target in materials development. However, simulation techniques for the chemical vapor deposition (CVD) process, which is the core of PI, have not been developed. This paper describes recent progress in simulation technology for CVD processes, with a particular focus on surface modeling.
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