Abstract
In this paper, we investigated the temperature dependence of electrical resistance of amorphous Ti-Ni-Zr high formable shape memory alloys (HFSMAs) for combinatorial measurement of glass transition temperature (Tg) and crystallization temperature (Tx). The electrical resistances of the Ti-Ni-Zr amorphous samples (ie. thin film metallic glasses: TFMGs) were measured using a four-terminals method. The samples were heated by a SiC heater in the vacuum chamber with heating rate of 10 K/min. The Tg and Tx were also measured by a differential scanning calorimetry (DSC) with heating rate of 10 K/min. We confirmed that the electrical resistance of Ti32Ni51Zr17 (at.%) TFMG decreased slightly at the Tg of 697 K. Moreover, the electrical resistance was decreased drastically over the Tx of 741 K. On the other hand, the Tg and Tx measured by the DSC measurement were 712 K, 763 K, respectively. The difference of thermal properties between two measurements was caused by the accuracy temperature measurement of heating equipment for measuring electric resistance.
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