Abstract
The excitation and emission mechanisms of the photoluminescence in NbOx films prepared using reactive RF sputtering are discussed. Three peaks on the emission spectrum are observed at 2.1 eV, 2.4 eV and 2.8 eV in the visible region. As the 2.1 eV and 2.8 eV peaks agree with the peaks observed in the photoconduction spectrum, it is proposed that these emission peaks can be attributed to the transitions from the conduction band to the 2.1 eV and 2.8 eV levels lying lower than the conduction band. The peak corresponding to the 2.4 eV emission peak does not appear in the photoconduction spectrum; therefore, this emission may be caused by the transition between the 0.35 eV and 2.8 eV levels. As the intensity of the emission peaks decreases with the heat treatment of the films in the oxygen atmosphere, it appears that these levels are caused by the vacancies in the oxygen atoms.
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