Abstract
The GaN material has good semiconductor and peizoelectric nature. It is used to realize various electronic, optical and surface acoustic wave (SAW) devices with high power and high frequency. In this paper, we study basic characteristics of a GaN ultraviolet (UV) sensor based on effect of acoustic wave charge transfer on GaN epitaxial film. We fabricated the test devices using GaN film with different conductance and measured basic sensing characteristics using two measuring systems. For conductive GaN film, the carriers in GaN film could be controlled by side electrode. When applied voltage of side electrode is 15V, the AC component of output signal is increasing with increasing of SAW input RF power. The DC component of output signal is proportional to UV intensity form 0.1μW/cm2 to 5μW/cm2. For semi-insulating GaN film, the DC component of output signal of SAW mode and layer mode also are proportional to UV intensity from 0.1μW/cm2 to 1.5μW/cm2, but it indicated different polarity. For insulating GaN film, the charge transfer efficiency is relatively higher than the semi-insulating film and the conductive film. We detected very small UV intensity about 0.2μW/cm2 under -25dbm SAW input RF power.
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