帯板のレーザ割断における温度上昇の抑制

Abstract

Brittle materials like semiconductor wafers and ceramic substrates are usually cut by diamond tools, where the generation of microcracks cannot be avoided. Recently, thermal stress cleaving of a thin strip using a point heat source is studied to cut brittle materials without leaving any microcracks on the cleaved surfaces. However, this method often causes thermal damages to the workpieces because of the very high temperature reached around the heating point. It is desirable to cut the electronic substrates, on which precise circuits were already formed, with minimizing the temperature rise. In the present paper, based on the plane thermoelasticity, the time dependent thermal stress intensity factor of a line crack has been obtained for two heating ways : by two point heat sources and a circular zone heat source located symmetrically with respect to the crack line. It was found that a zone heating is better than a point heating in the case of a thin strip cleaving under the restriction of the temperature rise. The most successful cleaving is generally achieved when a radius of a heating region is expanded up to the crack tip. The present calculation was compared with the experimental results and good agreement was found.