Abstract
To produce the 1nm deep-scale rulers, the lines and spaces and cross groove processing properties were investigated on layered crystalline muscovite mica using a silicon tip (less than 50nm radius). The following results were obtained. (1) Processing depth dependence on contact load and processing velocity were evaluated, and then the proper load and velocity conditions (1000nN, 5 μ m/s) to process 1nm depth grooves, corresponding to the basal planes, were obtained. (2) 1nm deep cross grooves were obtained by applying the proper load and velocity. (3) For the formation of lines and spaces, the interval pitch was minimized to 200nm. (4) Grooves with 1, 2, 3 and 4nm depth were processed by changing scanning cycles, under the proper load and velocity conditions. (5) From these results, cross grooves approximately one-nanometer deep at an interval of 200nm were produced.
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