Abstract
Among Cu-based multinary compounds, we have attempted to grow Cu2-IV-Se3 and Cu-III-IV-Se4 compounds (III=Ga, In; IV=Ge, Sn). It is found that Cu2GeSe3, Cu2SnSe3, CuGaGeSe4 and Se-rich CulnGeSe4 are formed a single phase by melt growth, and these lattice constants are determined from powder X-ray diffraction. From the temperature dependence of electrical resistivities, thermal band gaps of Cu2SnSe3 and CuGaGeSe4 are estimated to be 0.44 and 0.46eV, respectively.
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