Abstract
Low temperature operation of MOS devices improves performance of LSI circuits because of the increase of carrier mobility, steep subthreshold slopes, elimination of latch-up, decrease of electrical resistance and improved noise behavior. A supercomputer using CMOS circuit technology cooled at liquid-nitrogen temperatures operates at double the speed of the circuit chips as compared to room-temperature operation. A further improvement of the speed in CMOS chips will be possible by optimizing the device design.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan)
Paper Title
Journal
Date
