Abstract
Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N 2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance–voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. D it and Q f/ q values are estimated to be 3×10 11 cm −2 eV −1 and −1.2×10 11 cm −2, respectively. These high values of D it and negative Q f/ q could possibly be due to Ge out diffusion and pile up at the SiO 2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MV cm −1.
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