Abstract
In article number 2100144, Su-Ting Han and co-workers demonstrate an electro-humidity-photoactive memristive device based on a MXene-ZnO heterojunction. The memristor shows highly repeatable switching features and its conductance can be synergistically modulated by electric, light, and humidity fields, enabling concomitant low-level in-sensor processing and high-level in-sensor computing.
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