Abstract

We have calculated the energy eigenvalues of the localized energy states arising from the interaction between the composite exciton-phonon states and isotopic impurity states for 0-0 and 0-1 phonon transitions in molecular crystals. The exciton-phonon-impurity state interaction Hamiltonian is derived, and the results are obtained at low temperatures where the participation of the low-energy acoustic phonons is assumed to be dominant. A condition on the localized energy states as a function of the trap depth is obtained. The results are found to be in good agreement with experiments on doped naphthalene crystals, and with the theoretical results already established.

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