Abstract
Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage Vbr 70-80 V. At the applied bias of 0.9 Vbr, the dark current was 75-200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5A/W at 1550 nm. Keywords: avalanche photodiode, InAlAs/InGaAs, mesa structure, dark current.
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