Muonium transitions in n-type gallium nitride

Abstract

The temperature-dependent asymmetries for zero-field relaxation components are used to characterize muonium transitions in n-type GaN. Kubo–Toyabe components are associated with Mu − states and an exponential is assigned to Mu 0 centers. Transitions observed in the 150–200 K region result in Mu − trapped at a metastable site. A model-dependent analysis allows separation of contributions from the two Mu − states. The Mu 0-related rate diverges near 600 K, and Mu − begins to exit the metastable location. Approximate transition energies are obtained within this constrained treatment.